DocumentCode
1945587
Title
Very Low Resistivity AuMn Gate Ohmic Contacts for GaInAs Diffused JFETs
Author
Hallali, P.E. ; Blanconnier, P. ; Bricard, L. ; Renaud, J.C.
Author_Institution
Centre National d´´Etudes des Télécomnmunications, Laboratoire de Bagneux, 196, Av. Henri Ravera, F-92220 Bagneux, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
For GaInAs/InP junction field effect transistors as well as heterojunction bipolar transistors, the achievement of very low resistivity P type ohmic contact is a very critical step because the Schottky barrier height on these materials is quite high. The realization of a highly doped P+ layer by Zn diffusion in a semi-closed box and the use of MnAu alloy contact have allowed to solve these difficulties : in fact, a contact resistivity as low as l0-7 ¿ cm2 has been obtained.
Keywords
Annealing; Conductivity; Contact resistance; FETs; Heterojunction bipolar transistors; Indium phosphide; JFETs; Ohmic contacts; Temperature; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436952
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