The solid state triode: a high performance FET for RF/microwave power applications

Author

Cogan, Adrian I.

Author_Institution

Microwave Technol. Inc., Fremont, CA, USA

fYear

1989

fDate

1-5 Oct. 1989

Firstpage

1217

Abstract

The basic requirements for RF/microwave power transistors are set forth. The salient features and applications of the solid-state triode (SST) are described and experimental results are presented. Typical broadband RF impedance characteristics are given; the device equivalent circuit, power gain test circuit, and device die layout are shown; and the RF transfer characteristics for a 50 W SST are presented. It is concluded that, as the SST exhibits technical features superior to presently available microwave transistors, this technology will not only offer cost-efficient replacements, but will also open the door to applications so far unaccessible to semiconducting devices.<>

Keywords

equivalent circuits; field effect transistors; power transistors; solid-state microwave devices; 50 W; RF power transistors; RF transfer characteristics; broadband RF impedance characteristics; die layout; equivalent circuit; high performance FET; microwave power transistors; power gain test circuit; solid state triode; Circuit testing; Equivalent circuits; Impedance; Microwave FETs; Microwave devices; Microwave technology; Microwave transistors; Power transistors; Radio frequency; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/IAS.1989.96798

Filename

96798