Single crystal silicon (SCS) XY-stage fabricated by DRIE and IR alignment

Author

Lee, Chris S B ; Han, Sejin ; MacDonald, Noel C.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2000

fDate

23-27 Jan 2000

Firstpage

28

Lastpage

33

Abstract

We describe a two-depth, large displacement, highly linear motion, SCS XY micropositioning stage fabricated by deep silicon etching and IR front-to-back alignment. A positioning range of up to 160 μm by 160 μm in the xy plane has been achieved. In order to release a large, SCS flat stage, IR alignment is used to open an etch window from the back of wafer. The device has a 400 μm by 300 μm SCS stage suspended by 14 μm springs and actuated by 100 μm deep comb fingers

Keywords

electrostatic actuators; elemental semiconductors; finite element analysis; micromachining; micromanipulators; micropositioning; silicon; sputter etching; 14 micron; 300 micron; 400 micron; Bosch silicon etching process; FEM simulation; IR front-to-back alignment; Si; deep RIE; deep comb finger actuated; etch window; highly linear motion; large displacement; laser vibrometry; micropositioning stage; motion decoupling; single crystal silicon XY-stage; spring suspended; stable actuation; two-depth; Breakdown voltage; Etching; Fingers; Geometry; Hydraulic actuators; Motion detection; Potential energy; Silicon; Springs; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on

Conference_Location

Miyazaki

ISSN

1084-6999

Print_ISBN

0-7803-5273-4

Type

conf

DOI

10.1109/MEMSYS.2000.838485

Filename

838485