Title :
CMOS 1 Micron Isolation Technology using Interface Sealing by Plasma Nitridation : Plasma SILO
Author :
Delpech, P. ; Vuillermoz, B. ; Berenguer, M. ; Straboni, A. ; Ternisien, T.
Author_Institution :
CNET Centre National d´´Etudes des Télécommunications, Chemin du Vieux Chêne, BP 98, F-38243 Meylan Cedex, France
Abstract :
The improvement of a 1 ¿m CMOS process using PLASMA SILO as an isolation technique has been evaluated by comparison with a classical LOCOS. The PLASMA SILO provides a reduction of 0.4 ¿m in the channel width loss, and a gain on the narrow channel effect. The other electrical characteristics are maintained (subthreshold characteristics, gate oxide integrity, etc,)
Keywords :
CMOS process; Isolation technology; Oxidation; Plasma applications; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Resumes; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
