Title :
2D Boron Distributions after Ion Implant and Transient Anneal
Author :
Pearson, P.J. ; Hill, C.
Author_Institution :
Plessey Research Caswell Ltd, Towcester, Northants, GB-NN12 8EQ, Great-Britain
Abstract :
A novel 2D profiling technique of high spatial resolution (20 × 20 nm) is used to measure the asymmetry in implanted and transiently annealed boron implants caused by 7° tilt of VLSI wafers during implantation.
Keywords :
Annealing; Boron; Conductivity; Etching; Geometry; Implants; Plasma applications; Resistors; Spatial resolution; Transmission line matrix methods;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
