DocumentCode
1945750
Title
2D Boron Distributions after Ion Implant and Transient Anneal
Author
Pearson, P.J. ; Hill, C.
Author_Institution
Plessey Research Caswell Ltd, Towcester, Northants, GB-NN12 8EQ, Great-Britain
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A novel 2D profiling technique of high spatial resolution (20 × 20 nm) is used to measure the asymmetry in implanted and transiently annealed boron implants caused by 7° tilt of VLSI wafers during implantation.
Keywords
Annealing; Boron; Conductivity; Etching; Geometry; Implants; Plasma applications; Resistors; Spatial resolution; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436961
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