DocumentCode
1945790
Title
The dephasing of coherent phonons in GaAs [100]
Author
Chang, Y.-M.
Author_Institution
Center for Condensed Matter Sci., Nat. Taiwan Univ., Taipei, Taiwan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
The dephasing of coherent LO phonons due to excess photoexcited carriers in the near surface region of the GaAs [100] crystal is investigated with a time-resolved second-harmonic generation technique. The dephasing process was accelerated by the pre-injected carriers through carrier-phonon scattering and incoherent phonon-phonon scattering.
Keywords
III-V semiconductors; electron-phonon interactions; gallium arsenide; hot carriers; optical harmonic generation; phonon-phonon interactions; time resolved spectra; GaAs; GaAs [100] crystal; carrier-phonon scattering; coherent LO phonon dephasing; excess photoexcited carriers; incoherent phonon-phonon scattering; near surface region; photoexcited hot carriers; pre-injected carriers; time-resolved second-harmonic generation; Charge carrier density; Delay effects; Gallium arsenide; Monitoring; Optical pumping; Optical scattering; Optical sensors; Phonons; Probes; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967986
Filename
967986
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