Title :
The dephasing of coherent phonons in GaAs [100]
Author_Institution :
Center for Condensed Matter Sci., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The dephasing of coherent LO phonons due to excess photoexcited carriers in the near surface region of the GaAs [100] crystal is investigated with a time-resolved second-harmonic generation technique. The dephasing process was accelerated by the pre-injected carriers through carrier-phonon scattering and incoherent phonon-phonon scattering.
Keywords :
III-V semiconductors; electron-phonon interactions; gallium arsenide; hot carriers; optical harmonic generation; phonon-phonon interactions; time resolved spectra; GaAs; GaAs [100] crystal; carrier-phonon scattering; coherent LO phonon dephasing; excess photoexcited carriers; incoherent phonon-phonon scattering; near surface region; photoexcited hot carriers; pre-injected carriers; time-resolved second-harmonic generation; Charge carrier density; Delay effects; Gallium arsenide; Monitoring; Optical pumping; Optical scattering; Optical sensors; Phonons; Probes; Pump lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967986
