DocumentCode :
1945871
Title :
Charge Trapping and Interface States Generation During Hot-Carrier Stressing of Simox N-Channel Mosfet´s
Author :
Zaleski, A. ; Hanjra, J.P.S. ; Ioannou, D.E. ; Campisi, G.J. ; Hughes, H.L.
Author_Institution :
Department of Electrical and Computer Engineering, George Mason University, VA
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
36
Lastpage :
37
Keywords :
Charge carrier processes; Hot carriers; Interface states; Laboratories; MOSFET circuits; Photonic band gap; Shape; Stress measurement; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664782
Filename :
664782
Link To Document :
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