Title :
Simulated space radiation effects on power MOSFETs in switching power supplies
Author :
Wahle, Peter J. ; Schrimpf, Ronald D. ; Galloway, Kenneth F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
The application of power MOSFETs in spaceborne power converters was simulated by exposing switched devices to low-dose-rate ionizing radiation. Both radiation-hardened and nonradiation-hardened devices were tested. The results were compared to those obtained at higher dose rates and with constant gate bias. The primary effects of ionizing radiation on power MOSFETs are changes in the threshold voltage and degradation of mobility. These effects result in slower switching speeds and reduced drive capability. Both threshold shift and mobility degradation were found to depend on bias conditions and dose rate. Therefore, in order to predict device behavior, both the radiation environment and operating conditions must be taken into account.<>
Keywords :
aerospace instrumentation; insulated gate field effect transistors; ion beam effects; power convertors; power transistors; space vehicle power plants; switched mode power supplies; gate bias; low-dose-rate ionizing radiation; mobility degradation; power MOSFET; space radiation effects; spaceborne power converters; switching power supplies; threshold voltage; Computational modeling; Degradation; Ionizing radiation; MOSFETs; Power supplies; Radiation effects; Space technology; Switching converters; Testing; Threshold voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IAS.1989.96799
