DocumentCode :
1945898
Title :
A new uncooled thermal IR detector using silicon diode
Author :
Kim, Jae-Kwan ; Han, Chul-Hi
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear :
2000
fDate :
23-27 Jan 2000
Firstpage :
102
Lastpage :
107
Abstract :
A new thermal infrared detector using temperature characteristics of a diode is proposed and developed. Micromachined isolated silicon diode for IR detection (MISIR) utilizes electrochemical etching technique to achieve the thermal isolation of the diode. Very high dependence on the junction temperature of the diode enables high responsivity of the MISIR and electrochemical etching provides effective isolation with simple and low-cost process. The fabricated MISIR exhibits the detectivity of 1.2×1010 (cm Hz½/W) under air ambient at room temperature
Keywords :
elemental semiconductors; etching; infrared detectors; micromachining; microsensors; semiconductor diodes; silicon; MISIR; Si; electrochemical etching; micromachining; silicon diode; temperature characteristics; thermal infrared detector; thermal isolation; uncooled device; Etching; Infrared detectors; Micromachining; P-n junctions; Semiconductor diodes; Silicon; Substrates; Temperature dependence; Temperature sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Conference_Location :
Miyazaki
ISSN :
1084-6999
Print_ISBN :
0-7803-5273-4
Type :
conf
DOI :
10.1109/MEMSYS.2000.838498
Filename :
838498
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1945898
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