• DocumentCode
    1945949
  • Title

    Shallow Junction Formation using CoSi2 as a Diffusion Source

  • Author

    Probst, V. ; Lippens, P. ; Van den Hove, L. ; Maex, K. ; Schaber, L. ; De Keersmaecker, R.

  • Author_Institution
    Interuniversity Microelectronics Center (IMEC v.z.w), Kapeldreef 75, B-3030 Leuven, Belgium; Siemens AG. General Research and Development (Mÿnchen)
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    437
  • Lastpage
    440
  • Abstract
    Thin layers of CoSi2 (120 nm) were used as a source for B and As diffusion in order to form shallow steep junctions with high interface concentration. SIMS deptl profiling as well as two-dimensional characterisation of the indiffusion demonstrate the power fo this technique over a wide range of ternperatures and times. Diodes with a high yield and a very low leakage current density (¿1nA/cm2) prove the reliability of the process.
  • Keywords
    Annealing; Diodes; Electrical resistance measurement; Integrated circuit yield; Microelectronics; Performance evaluation; Research and development; Silicidation; Silicides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1945949