Title :
Shallow Junction Formation using CoSi2 as a Diffusion Source
Author :
Probst, V. ; Lippens, P. ; Van den Hove, L. ; Maex, K. ; Schaber, L. ; De Keersmaecker, R.
Author_Institution :
Interuniversity Microelectronics Center (IMEC v.z.w), Kapeldreef 75, B-3030 Leuven, Belgium; Siemens AG. General Research and Development (Mÿnchen)
Abstract :
Thin layers of CoSi2 (120 nm) were used as a source for B and As diffusion in order to form shallow steep junctions with high interface concentration. SIMS deptl profiling as well as two-dimensional characterisation of the indiffusion demonstrate the power fo this technique over a wide range of ternperatures and times. Diodes with a high yield and a very low leakage current density (¿1nA/cm2) prove the reliability of the process.
Keywords :
Annealing; Diodes; Electrical resistance measurement; Integrated circuit yield; Microelectronics; Performance evaluation; Research and development; Silicidation; Silicides; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
