Title : 
A Silicon interposer BGA package with Cu-filled TSV and multi-layer Cu-plating interconnect
         
        
            Author : 
Kumagai, Kouichi ; Yoneda, Yuko ; Izumino, Hitoshi ; Shimojo, Hiroko ; Sunohara, Masahiro ; Kurihara, Takashi ; Higashi, Mitsutoshi ; Mabuchi, Yoshihiro
         
        
            Author_Institution : 
Syst. Fabrication Technol. Inc., Yokohama
         
        
        
        
        
        
            Abstract : 
A novel silicon interposer (SilP) BGA package (PKG) - SilP PKG - has been developed and qualified through test chip. It features three key process technologies; Cu-filled through Si via (TSV), fine pitch multi-layer wiring with Cu- plating, and micro-bump interconnect. The cost-conscious fabrication process flow has been developed based on the build-up print boards´ Cu-plating technology and Si wafer batch process. The SilP PKG reliability as an LSI package has been confirmed.
         
        
            Keywords : 
ball grid arrays; copper; electroplating; integrated circuit interconnections; silicon; wafer level packaging; Cu; LSI package; Si; fabrication process; microbump interconnect; multilayer plating interconnect; multilayer wiring; print board; silicon interposer BGA package; test chip; through Si via; wafer batch; Bonding; Fabrication; Large scale integration; Lead; Packaging; Resins; Silicon; Testing; Through-silicon vias; Wiring;
         
        
        
        
            Conference_Titel : 
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
         
        
            Conference_Location : 
Lake Buena Vista, FL
         
        
        
            Print_ISBN : 
978-1-4244-2230-2
         
        
            Electronic_ISBN : 
0569-5503
         
        
        
            DOI : 
10.1109/ECTC.2008.4550030