Title :
Redistribution of Ion-Implanted Mercury During Rapid Thermal Annealing of Ga0.47 In0.53 As and InP
Author :
Wilkie, J.H. ; Sealy, B.J.
Author_Institution :
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
Abstract :
Rutherford backscattering (RBS) has been used to study the redistribution of ion-implanted mercury and the reordering of implantation damage during Rapid Thermal Annealing (RTA) of Ga0.47 In0.53As epilayers and bulk InP. Implantation at 200°C prevents amorphous layer formation and reduces the extent of Hg redistribution in both materials. Si3N4 and phosphosilicate glass (PSG) are compared as encapsulants for InP; it is suggested that silicon indiffusion enhanced by radiation damage may be the reason why p-type activity has only been seen for 200°C implanted material.
Keywords :
Amorphous materials; Backscatter; Gallium arsenide; Implants; Indium phosphide; Mercury (metals); Rapid thermal annealing; Sealing materials; Temperature; Thermal engineering;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
