• DocumentCode
    1946131
  • Title

    The effects of MOSFET output capacitance in high frequency applications

  • Author

    Gauen, Kim

  • Author_Institution
    Motorola, Phoenix, AZ, USA
  • fYear
    1989
  • fDate
    1-5 Oct. 1989
  • Firstpage
    1227
  • Abstract
    In high-frequency power converters (those with switching frequencies >200 kHz) losses associated with charging and discharging the MOSFET´s output capacitance begin to affect system efficiency. It is noted that knowing these losses improves predictions of the frequency at which zero-voltage-switched resonant topologies become more efficient than zero-current-switched converters or related square-wave devices. Ways to estimate these losses are shown. Emphasis is placed on determining the losses due to C/sub dg/, since they are especially troublesome to calculate. It is observed that the concept of gate charge greatly improved the understanding of the MOSFET´s input characteristics, and there is some benefit to applying similar charge concepts to the output capacitances. A quick summary of gate charge concepts lays the foundation for an in-depth look at how gate charge data and losses due to C/sub dg/ are related.<>
  • Keywords
    capacitance; insulated gate field effect transistors; losses; power convertors; 200 kHz; MOSFET output capacitance; gate charge; high frequency applications; losses; power converters; switching frequencies; zero-voltage-switched resonant topologies; Capacitors; Equations; Frequency conversion; MOSFET circuits; Parasitic capacitance; Power MOSFET; Resonance; Switching converters; Switching frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
  • Conference_Location
    San Diego, CA, USA
  • Type

    conf

  • DOI
    10.1109/IAS.1989.96800
  • Filename
    96800