Ageing sensor for analog application

Author

Dubois, Benoît ; Kammerer, Jean-baptiste ; Hébrard, Luc ; Braun, Francis

Author_Institution

Inst. d´´Electron. du Solide et des Syst., Strasbourg Univ., Strasbourg, France

fYear

2009

fDate

June 28 2009-July 1 2009

Firstpage

1

Lastpage

4

Abstract

We present an analytical CMOS transistor ageing model based on hot-carrier induced degradation. Then we show how such a model can be used to forecast and understand the drift of the main characteristics of a CMOS circuit. Further we demonstrate that this model can be used to choose and/or modify a circuit in order to control the hot-carrier induced degradations. Finally we present an original application of our method: an ageing sensor dedicated for analog circuit based on hot-carrier induced degradation.

Keywords

CMOS analogue integrated circuits; ageing; electric sensing devices; hot carriers; transistors; CMOS circuit; ageing sensor; analog application; analytical CMOS transistor ageing model; hot-carrier induced degradation; Aging; Analog circuits; Degradation; Electron mobility; Hot carriers; Niobium compounds; Predictive models; Semiconductor device modeling; Sensor phenomena and characterization; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems and TAISA Conference, 2009. NEWCAS-TAISA '09. Joint IEEE North-East Workshop on

Conference_Location

Toulouse

Print_ISBN

978-1-4244-4573-8

Electronic_ISBN

978-1-4244-4574-5

Type

conf

DOI

10.1109/NEWCAS.2009.5290449

Filename

5290449