• DocumentCode
    1946345
  • Title

    Nano-scale bending test of Si beam for MEMS

  • Author

    Namazu, Takahiro ; Isono, Yoshitada ; Tanaka, Takeshi

  • Author_Institution
    Dept. of Mech. Eng., Ritsumeikan Univ., Kyoto, Japan
  • fYear
    2000
  • fDate
    23-27 Jan 2000
  • Firstpage
    205
  • Lastpage
    210
  • Abstract
    We carried out a nanometer scale bending test for a single crystal silicon (Si) beam using an atomic force microscope (AFM). Nanometer scale Si beams with widths from 200 nm to 800 nm and a thickness of 255 nm were fabricated on an Si diaphragm by means of the field-enhanced anodization using AFM and the anisotropic wet etching. Bending tests for a micro- and millimeter scale beam were also carried out using an ultra-precision hardness tester and scratch tester, respectively. The mechanical property of Si beams on a nanometer scale was compared with that measured on a micro- and millimeter scale. SEM observations of the fracture surface were performed in order to reveal the size effect on the bending strength
  • Keywords
    atomic force microscopy; bending strength; elemental semiconductors; fracture mechanics; hardness testing; micromechanical devices; nanotechnology; nondestructive testing; scanning electron microscopy; silicon; surface structure; 200 to 800 nm; 255 nm; MEMS; Si; Si beam; Si diaphragm; anisotropic wet etching; atomic force microscope; bending strength; field-enhanced anodization; fracture surface; microscale; millimeter scale; nanometer scale; nanoscale bending test; scratch tester; size effect; ultra-precision hardness tester; Anisotropic magnetoresistance; Atomic beams; Atomic force microscopy; Mechanical factors; Mechanical variables measurement; Micromechanical devices; Scanning electron microscopy; Silicon; Testing; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
  • Conference_Location
    Miyazaki
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5273-4
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2000.838517
  • Filename
    838517