DocumentCode
1946349
Title
Hot Electron Reliability of Deep Submicron MOS Transistors
Author
Reimbold, G. ; Paviet-Salomon, F. ; Haddara, H. ; Guegan, G. ; Cristoloveanu, S.
Author_Institution
LETI, CENG, 85X, F-38041 Grenoble Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The hot electron induced degradation of fully optimized N-channel MOSFET´s, having channel lengths in the range 0.3 ¿m,- 0.6 ¿m, is systematically investigated. The created defects and their influence on the device performance are evaluated with very sensitive techniques and explained using 2D modelling. The device lifetime is analysed as a function of the biasing conditions. These results are interpreted by taking into consideration the extension of the defective region as well as the local generation rate of interface states.
Keywords
Aging; DH-HEMTs; Degradation; Electrons; Interface states; Irrigation; MOSFETs; Semiconductor device reliability; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436995
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