Title :
A 2.5 V 0.13 μm CMOS amplifier for a high-temperature sensor system
Author :
Sadeghi, Nima ; Mirabbasi, Shahriar ; Bennington, Chad P J
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada
fDate :
June 28 2009-July 1 2009
Abstract :
A high-temperature amplifier, designed and simulated in a 0.13 mum CMOS process, is presented. The amplifier is intended to operate in a wood chip digester used for pulp manufacture in which the ambient temperature can be as high as 180degC. Since the foundry provided modeled are valid up to 125degC, the amplifier along with its bias circuitry is simulated up to 125degC by considering a reasonable margin for the gain and gain bandwidth when temperature increases beyond 125degC. At 125degC, the amplifier has a DC gain of 69 dB, phase margin of 86deg and unity gain bandwidth of 4.13 MHz, while consuming 0.62 mW (excluding the bias circuitry) from a 2.5 V supply.
Keywords :
CMOS analogue integrated circuits; amplifiers; temperature sensors; CMOS amplifier; DC gain; bandwidth 4.13 MHz; high-temperature sensor system; power 0.62 mW; pulp manufacture; size 0.13 mum; voltage 2.5 V; wood chip digester; Aerospace industry; Bandwidth; Batteries; CMOS logic circuits; CMOS process; CMOS technology; Circuit simulation; Pulp manufacturing; Sensor systems; Temperature sensors;
Conference_Titel :
Circuits and Systems and TAISA Conference, 2009. NEWCAS-TAISA '09. Joint IEEE North-East Workshop on
Conference_Location :
Toulouse
Print_ISBN :
978-1-4244-4573-8
Electronic_ISBN :
978-1-4244-4574-5
DOI :
10.1109/NEWCAS.2009.5290460
