Implantation and Diffusion Modelling of Boron in Silicon

The accurate simulation of implanted and diffused impurity profiles in silicon is extremely important when developing VLSI processes. In this work simulations with different process simulators and the corresponding experimental results for implantation and diffusion in N2 ambient of boron in silicon are compared. Our study reports a remarkable dose dependence of the shape of the experimental profiles. Strategies have been developed to increase the simulation accuracy.