DocumentCode
1946638
Title
A GaAs on Si Coplanar Technology by Embedded Molecular Beam Epitaxy
Author
Liang, J.B. ; De Boeck, J. ; Mertens, R. ; Borghs, G.
Author_Institution
Interuniversity Micro-Electronics Center vzw, Kapeldreef 75, B-3030 Leuven, Belgium
fYear
1988
fDate
13-16 Sept. 1988
Keywords
Circuits; Gallium arsenide; Hafnium; Metallization; Molecular beam epitaxial growth; Silicon; Substrates; Surface morphology; Surface topography; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437009
Link To Document