• DocumentCode
    1946650
  • Title

    Improvement of GaAs Epitaxial Layers by Indium Incorporation

  • Author

    Laurenti, J.P. ; Roentgen, P. ; Wolter, K. ; Seibert, K. ; Kurz, H. ; Camassel, J.

  • Author_Institution
    Groupe d´´Etude des Semiconducteurs, université des Sciences et Techniques du Languedoc, F-34060 Montpellier Cedex, France
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    The influence of indium incorporation (0 - 6.5×1019cm-) in GaAs OMVPE layers, on near-band-edge optical properties and deep trap content has been investigated. The bound exciton and donor-acceptor recombination lines in photoluminescence (PL) spectra shift toward lower energies versus indium content. This indicates the formation of a very dilute GaInAs ternary compound. The corresponding PL intensities increase by a factor of 10. This improvement in the optical quality of the layers correlates with a decrease in a ratio 10 for chromium-related PL intensities. On the opposite, the EL2 concentration and depth profile determined by DLTS are not affected. We suggest that indium relaxes lattice distorsions arround residual detects and limits the formation of dislocations.
  • Keywords
    Charge carrier processes; Energy resolution; Epitaxial layers; Excitons; Gallium arsenide; Indium; Laboratories; Lattices; Luminescence; Photoluminescence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5437011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1946650