Title :
CAD MOSFET Model for EPROM Cells
Author :
Ballay, N. ; Baylac, B.
Author_Institution :
SGS-Thomson Microelectronics, Central R&D/CIS/TDMC, BP 217, F-38019 Grenoble Cedex, France
Abstract :
A CAD model of MOS transistor suitable for circuit simulation of an EPROM cell during writing cycle is proposed. This model is as close as possible of physics to allow the designer to evaluate different schemes and changes in the process variables. It is reliable in the breakdown mode too and takes into account the gate current induced by channel hot electrons.
Keywords :
Bipolar transistors; Design automation; EPROM; Electric breakdown; Electric resistance; Electrons; MOSFET circuits; Resistors; Voltage; Writing;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
