DocumentCode
1946732
Title
Very Rapid Growth of High Quality GaAs, InP and Related III-V Compounds
Author
Deschler, M. ; Gruter, K. ; Schlegel, A. ; Beccard, R. ; Jurgensen, H. ; Balk, P.
Author_Institution
Institute of Semiconductor Electronics, Aachen Technical University, D-5100 Aachen, F.R.G.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Application of the hydride growth process at overall pressures below 5×103 Pa yields very high rates of deposition for binary (GaAs, InP) and ternary (GaInAs, GaAsP) III-V semiconductor films. It is proposed that at these conditions the hydrides AsH3 and PH3 reach the substrate surface undecomposed and react directly with the group III chloride (GaCl, InCl). The rates can be convenently adjusted over a wide range by varying the reactant pressures. Films of excellent morphology with low background doping, high electron mobilities and well resolved PL spectra were obtained.
Keywords
Electron mobility; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Photodetectors; Photoluminescence; Semiconductor device doping; Semiconductor films; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437014
Link To Document