DocumentCode
1946758
Title
Two-Dimensional Computer Simulation of Hot Carrier Degradation in N.MOSFETs
Author
Garrigues, M. ; Alexandre, A. ; Rojo, P. ; Pedron, T. ; Belhaddad, K. ; Poncet, A.
Author_Institution
Laboratoire d´´Electronique, Automatique et Mesures Electriques, CNRS-UA 848, Ecole Centrale de Lyon, BP 163, F-69131 Ecully Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
This paper presents a two-dimensional hot-carrier simulator which calculates the spatial distribution of hot electron and hot hole emission currents along the Si-SiO2 interface of a MOS transistor. The simulation are compared to experimental hot-carrier degradations for a n-chanel transistor and different stress bias conditions. It is shown that hole injection effects are only dominant at low gate voltages and that the usual correlation between degradation and substrate current may be attributed only to hot electrons.
Keywords
Charge carrier processes; Computational modeling; Computer simulation; Degradation; Electron emission; Hot carriers; Low voltage; MOSFETs; Stress; Substrate hot electron injection;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437015
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