Title :
Low leakage radiation tolerant CAM/TCAM cell
Author :
Eftaxiopoulos, Nikolaos ; Axelos, Nicholas ; Pekmestzi, Kiamal
Author_Institution :
Dept. of Comput. Sci., Nat. Tech. Univ. of Athens, Athens, Greece
Abstract :
In this paper we propose a leakage-aware soft error tolerant storage element, implementable in standard CMOS technology and able to operate both as a CAM and as a TCAM cell. The proposed cell is immune to SNUs (Single Node Upsets) when operating as a CAM cell and demonstrates partial resilience (75%) when operating as a TCAM cell. Simulation results in SPICE at a 45nm PTM technology show a significant reduction in leakage dissipation compared to the standard but unprotected 6T-based TCAM cell as well as compared to conventional DICE-based CAM/TCAM solutions.
Keywords :
CMOS memory circuits; content-addressable storage; radiation hardening (electronics); leakage dissipation; leakage-aware soft error tolerant storage element; low leakage radiation tolerant CAM/TCAM cell; single node upsets; standard CMOS technology; Arrays; Computer aided manufacturing; MOSFET; SRAM cells; Standards; Transient analysis;
Conference_Titel :
On-Line Testing Symposium (IOLTS), 2015 IEEE 21st International
Conference_Location :
Halkidiki
DOI :
10.1109/IOLTS.2015.7229860
