Title :
1.55 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers with deeply etched first order vertical grating
Author :
Hyo-Chang Kim ; Wiedmarm, J. ; Matsui, K. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
1.55 /spl mu/m wavelength distributed feedback (DFB) lasers consisting of a first order vertical grating formed on the sidewalls of the high-mesa stripe geometry were realized by a simple electron beam lithography and CH/sub 4//H/sub 2/-RIE etching. The threshold current of 15 mA and the differential quantum efficiency of 55% were obtained for a 370 /spl mu/m long and 3.5 /spl mu/m wide stripe device.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; electron beam lithography; gallium arsenide; indium compounds; laser transitions; optical fabrication; quantum well lasers; sputter etching; 1.55 /spl mu/m wavelength; 1.55 micron; 15 mA; 3.5 micron; 370 micron; CH/sub 4//H/sub 2/-RIE etching; DFB lasers; GaInAsP-InP; GaInAsP/InP distributed feedback lasers; SQW wafer structure; deeply etched first order vertical grating; differential quantum efficiency; electron beam lithography; first order vertical grating; high-mesa stripe geometry; sidewalls; stripe device; threshold current; Coatings; Distributed feedback devices; Dry etching; Electrons; Indium phosphide; Laser feedback; Optical device fabrication; Pulse measurements; Pulsed laser deposition; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.968027
