Title :
Circuit utilization characteristics of MOS-controlled thyristors
Author :
Jahns, T.M. ; De Doncker, R.W. ; Wilson, J. WA ; Temple, V.A.K. ; Watrous, D.L.
Author_Institution :
GE Corporate Res. & Dev., Schenectady, NY, USA
Abstract :
User-oriented information regarding MCT (MOS-controlled thyristor) circuit utilization is presented by focusing on the measured characteristics of a particular lot of MCTs (80 A, 500 V) fabricated in 1988. Measurements confirm the low forward voltage drop of the MCTs (1.1 V at 200 A/cm/sup 2/, 150 degrees C). To increase current-handling capabilities, eight matched devices have been paralleled to switch 600 A at 275 V (peak), representing a modest 60% device current derating. Measured MCT turn-on is faster than turn-off, which is dominated by internal charge recombination characteristics. Safe operating area and di/dt limits of the tested MCTs are discussed. Comparison with IGBTs (insulated gate bipolar transistors) indicates that MCTs offer clear advantages for minimizing on-state conduction losses (approximately 3:1 at 150 degrees C), and switching times of new MCTs are as low as those of comparable IGBTs.<>
Keywords :
insulated gate field effect transistors; thyristors; 150 degC; 275 V; 500 V; 600 A; 80 A; MOS-controlled thyristors; current-handling capabilities; forward voltage drop; internal charge recombination; on-state conduction losses; Charge measurement; Circuits; Current measurement; Insulated gate bipolar transistors; Low voltage; MOSFETs; Particle measurements; Switches; Testing; Thyristors;
Conference_Titel :
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IAS.1989.96803
