Narrow Channel Effect on n- and p-Channel Devices Fabricated with the Silo and Box Isqlation Techniques

We have studied the narrow channel effect (NCE) on active devices fabricated with the SILO and BOX isolation techniques. The importance of the boron encroachment in the active region is shown, as well as the advantage of the BOX technique which uses a deposited oxide instead of a thermal oxide in the SILO process. With a low field implantation dose used to reduce the NCE, a double threshold effect in the subthreshold characteristic s inevitable.