A robust large signal non-quasi-static MOSFET model for circuit simulation

Author

Wang, H. ; Gildenblat, G.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

2004

fDate

3-6 Oct. 2004

Firstpage

5

Lastpage

8

Abstract

This work introduces a surface-potential-based compact non-quasi-static (NQS) MOSFET model that solves the current continuity equation, works in all regions of MOSFET operation (including accumulation, depletion, and inversion regions) and can be implemented into SPICE-based circuit simulators. The new model is obtained by extending the previously reported spline-collocation method and has been implemented in Verilog-A code. The study of NQS effects in several important circuits is included and the model is verified by comparison with direct numerical solution of the continuity equation.

Keywords

MOSFET; SPICE; circuit simulation; semiconductor device models; splines (mathematics); surface potential; MOSFET model; SPICE-based circuit simulators; Verilog-A; accumulation operation region; circuit simulation; current continuity equation; depletion operation region; inversion operation region; large signal nonquasistatic model; spline-collocation method; surface-potential-based compact model; Circuit simulation; Differential equations; Hardware design languages; MOSFET circuits; Partial differential equations; Radio frequency; Robustness; Semiconductor device modeling; Signal design; Spline;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004

Print_ISBN

0-7803-8495-4

Type

conf

DOI

10.1109/CICC.2004.1358718

Filename

1358718