DocumentCode
1947141
Title
Electroluminescence from Silicon Devices -A Tool for Device and Material Characterization
Author
Penner, K.
Author_Institution
Siemens AG, Corporate Research and Technology, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.C.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The light distribution generated by electroluminescence phenomena inside silicon devices yields information on the functioning of the devices as well as on the materials used. An improved camera system has been installed, with a spectral sensitivity from near UV to near IR (300-1200nm) allowing the registration of various electrolumiscence phenomena, with high temporal and spatial resolution.
Keywords
Cameras; Charge carrier processes; Electroluminescent devices; Electrons; Infrared detectors; Optical devices; Radiation detectors; Radiative recombination; Silicon devices; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437033
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