A direct method to extract effective geometries and series resistances of MOS transistors

Author

Karlsson, Peter R. ; Jeppson, Kjell O.

Author_Institution

Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1994

fDate

22-25 Mar 1994

Firstpage

184

Lastpage

189

Abstract

A new direct method for rapid characterization of MOS transistor effective geometries and series resistances is presented. The method only requires devices of four different sizes. Also presented is a new linear regression technique that offers a natural extension of the method to any arbitrary number of devices. Finally, the channel width dependence of the mobility reduction factor is shown to be explained by the electrical broadening of the channel

Keywords

carrier mobility; electric resistance; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; statistical analysis; MOS transistors; MOSFET; channel width dependence; direct method; effective geometries; linear regression technique; mobility reduction factor; parameter extraction; rapid characterization; series resistances; Circuit synthesis; Condition monitoring; Electric resistance; Geometry; Linear regression; MOSFETs; Optimization methods; SPICE; Solid state circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303479

Filename

303479