Title :
Comparison of the MCT and MOSFET for a high frequency inverter
Author :
Hudgins, J.L. ; Blanco, D.F. ; Menhart, S. ; Portnoy, W.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
MOS-controlled thyristors (MCTs) were tested for operating characteristics when switching 100 A and above, at up to 100 kHz. Power MOSFETs and a silicon-controlled rectifier (SCR) were also used as switches for a performance comparison. The MCTs operated with the lowest energy losses, due to a combination of low forward voltage drop and fast turn-on and turn-off. The MCTs tested have proved to be fast switching devices with low energy losses. According to the data presented, these devices should be able to perform at frequencies up to several hundred kilohertz. Incorporating them into an inverter circuit, such as a half or full-bridge arrangement, can provide operation at 100 to 200 kHz.<>
Keywords :
invertors; thyristor applications; 100 A; 100 to 200 kHz; MOS-controlled thyristors; MOSFET; energy losses; forward voltage drop; high frequency inverter; silicon-controlled rectifier; Energy loss; Frequency; Inverters; Low voltage; MOSFET circuits; Power MOSFET; Rectifiers; Switches; Testing; Thyristors;
Conference_Titel :
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IAS.1989.96804
