Title :
A New Method for the Determination of the Spatial Distribution of Hot Carrier Damage
Author :
Mahnkopf, R. ; Przyrembel, G. ; Wagemann, H.G.
Author_Institution :
Institut fÿr Werkstoffe der Elektrotechnilk der Technisohen Universitÿt Berlin, Jebensstr. 1, D-1000 Berlin 12, F. R. G.
Abstract :
A new method is presented for the experimental evoluation of the spatial distribution of interface states and fixed oxide charges generated by hot carriers. This method is fully based on HF-capacitance (CV) and charge-pumping (CP) measurements. A general discussion of the method is followed by an application to MOSFET´s with different channel lengths stressed with various bias conditions.
Keywords :
Capacitance; Charge pumps; Current measurement; Equations; Hot carrier injection; Hot carriers; Interface states; MOSFET circuits; Stress measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
