DocumentCode
1947348
Title
A 1.8V triode-type transconductor and its application to a 10MHz 3rd-order Chebyshev low pass filter
Author
Kim, Young-Ho ; Park, JUng-Woo ; Park, Mun-Yag ; Yu, Hyun-Kyu
Author_Institution
Dept. of Large Scale SoC Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear
2004
fDate
3-6 Oct. 2004
Firstpage
53
Lastpage
56
Abstract
A fully differential dual input CMOS transconductor, with high linearity and low distortion, is proposed. To achieve high performance characteristics at low supply voltage, three design considerations are described from the viewpoint of DC-offsets, linear range, and distortions. A 1.8 V 10 MHz fully-differential 3rd-order Chebyshev Gm-C low pass filter, using this transconductor, is designed and fabricated using a 0.18 μm CMOS process. Measured results in a nominal condition (Vc=1.05 V) show 11.3 MHz of bandwidth, 43.7 dBr of stop-band attenuation at 40 MHz, 0.38 dB of pass-band ripple, and 74.4 dB of dynamic range. In addition, the IIP3 obtained at the optimum resistance of the resistor utilized as a distortion canceller is 16.3 dBm. The filter consumes 2.34 mA at 1.8 V power supply.
Keywords
CMOS analogue integrated circuits; Chebyshev filters; low-pass filters; low-power electronics; 0.18 micron; 1.05 V; 1.8 V; 10 MHz; 11.3 MHz; 2.34 mA; 40 MHz; CMOS transconductor; Chebyshev low pass filter; DC-offsets; Gm-C filter; distortion cancelling resistor; fully differential dual input transconductor; high linearity transconductor; linear range; low distortion transconductor; low supply voltage; pass-band ripple; stop-band attenuation; triode-type transconductor; Attenuation measurement; Bandwidth; CMOS process; Chebyshev approximation; Distortion measurement; Electrical resistance measurement; Linearity; Low pass filters; Low voltage; Transconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN
0-7803-8495-4
Type
conf
DOI
10.1109/CICC.2004.1358733
Filename
1358733
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