DocumentCode
1947356
Title
Automatic in-line to end-of-line defect correlation using FSRAM test structure for quick killer defect identification
Author
Wilson, Dave ; Walton, Anthony J.
Author_Institution
Motorola Ltd., Glasgow, UK
fYear
1994
fDate
22-25 Mar 1994
Firstpage
160
Lastpage
163
Abstract
This paper describes the use of Fast Static RAM (FSRAM) test structures to identify defect locations which are then used to wafer map defect sites. It describes how to automate in-line to end-of-line defect correlation to quickly identify the origin of killer defects. In-line defects are identified using a Tencor Surfscan 7000 and these defect locations are overlayed onto failing bitmap data from functional testers. The analysis and overlay software has been written using a commonly available database, RS/1 to automatically generate histograms of defects-to-fail ratios for each monitoring stage. This rapidly identifies the key defectivity steps in a new process. Using this approach large amounts of data can be quickly processed allowing realistic SPC defectivity limits to be set from a large sample size
Keywords
SRAM chips; automatic testing; correlation methods; integrated circuit testing; FSRAM test structure; Fast Static RAM; SPC defectivity limits; Tencor Surfscan 7000; defect correlation; defect sites; defectivity steps; defects-to-fail ratios; failing bitmap data; functional testers; histograms; in-line defects; monitoring stage; quick killer defect identification; wafer map; Automatic testing; Buildings; Data acquisition; Data analysis; Inspection; Kelvin; Light scattering; Manufacturing; Monitoring; Read-write memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-1757-2
Type
conf
DOI
10.1109/ICMTS.1994.303484
Filename
303484
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