Temperature-controlled wafer level Joule-heated constant-current EM tests of W/AlCuSi/W wires

Author

Anata, Y. ; Fujisaki, Y. ; Kawaji, M. ; Katto, H. ; Kubo, M.

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

1994

fDate

22-25 Mar 1994

Firstpage

147

Lastpage

151

Abstract

An automatic wafer level electromigration evaluation system has been newly developed. It quickly increases the stress current until the wire temperature reaches the target temperature by joule-heating. The stress current is then kept constant. The W/AlCuSi/W wires are evaluated with the system and the result is compared with an oven test system. The activation energy, Ea, is constant over the temperatures from 170°C to 430°C. Ea of 0.93 eV and current exponent, n, of 2.3 are obtained for 1 μm wide W/AlCuSi/W wires

Keywords

aluminium alloys; automatic test equipment; automatic testing; circuit reliability; copper alloys; electromigration; integrated circuit testing; metallisation; silicon alloys; temperature control; tungsten; 1 micron; 170 to 430 C; IC metallisation; Joule-heated constant-current tests; W-AlCuSi-W; electromigration evaluation system; stress current; temperature-controlled wafer level tests; Automatic testing; Current density; Electrical resistance measurement; Electromigration; Ovens; Probes; Stress; System testing; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303486

Filename

303486