Title :
Design and Characterisation of High-Performance 0.13 μm NMOS Devices
Author :
Schmitz, J. ; Paulzen, G.M. ; Gravesteijn, D.J. ; Montree, A.H. ; Woerlee, P.H.
Author_Institution :
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Abstract :
We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
