DocumentCode :
1947453
Title :
Intrinsic Gate Capacitances and Large-Signal Transient Modeling of Thin-Film Accumulation-Mode P-Channel Soi Mosfets
Author :
Gentinne, B. ; Flandre, D. ; Terao, A. ; Colinge, J.P.
Author_Institution :
Microelectronics Lab., University Catholique de Louvain, Belgium
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
52
Lastpage :
53
Keywords :
Analytical models; Capacitance measurement; MOSFETs; Microelectronics; SPICE; Semiconductor device modeling; Substrates; Thin film circuits; Threshold voltage; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664790
Filename :
664790
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1947453
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