DocumentCode :
1947495
Title :
Effects of Epitaxial Growth and Subsequent Processing on Simox Soi Electrical Defect Density
Author :
McNamara, Jeanne M. ; Buller, James F.
Author_Institution :
Harris Semiconductor, Melbourne, FL
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
56
Lastpage :
57
Keywords :
Aluminum; Density measurement; Electric variables measurement; Epitaxial growth; Etching; Implants; Integrated circuit measurements; Ion implantation; Measurement standards; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664792
Filename :
664792
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1947495
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