Boron doping to diamond and DLC using plasma immersion ion implantation

Summary form only given. Controlling carriers in diamond by doping is important to realize diamond electronic devices with advanced electrical characteristics. As a doping method the Plasma Immersion Ion Implantation (PIII) has been gathering attention due to its excellence in making shallow, highly doped regions over large areas, and its high dose rate, good dose controllability and isotropic doping properties. We have begun to investigate boron doping of diamond, silicon and diamond-like carbon films using PIII. As a doping source we use the plasma sputtering of a solid boron carbide (B/sub 4/C) target instead of toxic gas source like diborane (B/sub 2/H/sub 6/). The B/sub 4/C target of 1" diameter and a substrate (Si, diamond or diamond-like carbon film) are located in the downstream region of an ECR plasma produced by the microwave plasma disc reactor (MPDR) filled with 1-5 mTorr Ar gas. In order to sputter the target a negative self bias from -400 V to -700 V is induced by applying RF (13.56 MHz) power of 50-200 W to the target holder. For boron ion implantation, negative pulses of -1 kV to -8 kV, 1-5 /spl mu/s pulse duration, 1-200 Hz repetition rate are applied to the substrate holder using a high voltage pulser which consists of high voltage capacitors and MOSFETs.