A systematic test methodology for identifying defect-related failure mechanisms in an EEPROM technology

Author

Hoffstetter, Diane M. ; Manley, Martin H.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

1994

fDate

22-25 Mar 1994

Firstpage

114

Lastpage

118

Abstract

A new test methodology is described for identifying defect-related failures of EEPROM memory cells. Currently, tunnel oxide Qbd tests are widely used to monitor the quality of the tunnel dielectric. These Qbd tests, however, cannot provide information on the defect-driven failure mechanisms that may limit manufacturing yield. A systematic sequence of tests is described that can be used to determine if there is a single defective cell present within a large test array of EEPROM cells, and to identify the nature of the defect. The test sequence is suitable for inclusion as part of the automated Electrical Test (ET) used in the manufacture of EEPROM or Flash EEPROM memories

Keywords

EPROM; automatic testing; failure analysis; EEPROM technology; automated electrical test; defect-driven failure mechanisms; defect-related failure mechanisms; flash EEPROM memories; manufacturing yield; memory cells; systematic test methodology; test array; test sequence; Automatic testing; Condition monitoring; Design for quality; Dielectrics; EPROM; Failure analysis; Manufacturing; Nonvolatile memory; Optical films; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303492

Filename

303492