DocumentCode
1947635
Title
Electrical Performances Comparison of Semi and Fully Recessed Isolation Structures
Author
Dubois, E. ; Coppee, J.-L. ; Baccus, B. ; Collard, D.
Author_Institution
ISEN, Institut Supérieur d´´Electronique du Nord, CNRS-LA 253, 41, Bd Vauban, F-59046 Lille Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Electrical characteristics of semi-recessed and fully-recessed LOCOS isolation techniques are analyzed. Two-dimensional process/device simulations, performed with the IMPACT package, have demonstrated the effect of the Si/SiO2 interface shape on isolation efficiency. An excellent agreement has been found between simulations and measurements for the studied structures.
Keywords
Aluminum; Analytical models; Circuit simulation; Electric variables; Isolation technology; Oxidation; Packaging; Performance analysis; Shape; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437054
Link To Document