A modified Gaudi structure for the optimisation of the focus of wafer steppers

Author

Walton, A.J. ; Fallon, M. ; Stevenson, J.T.M. ; Ross, A.W.S. ; Reeves, C.M.

Author_Institution

Dept. of Electr. Eng., Edinburgh Univ., UK

fYear

1994

fDate

22-25 Mar 1994

Firstpage

81

Lastpage

84

Abstract

The performance of the Gaudi structure has been examined and its sensitivity to dimensional variation is demonstrated. It has been shown that the effect of variation in resistivity and etch can be minimised by grouping the structures close together. This procedure has been used to optimise the focus setting using the Gaudi structure. A modified Gaudi test structure that is more sensitive to dimensional changes is also proposed. It consists of a single layer of polysilicon, the resistance of which is modulated by changes in resolution. Its sensitivity is maximised as the resolution approaches perfection making it ideally suited to optimising the setup of wafer steppers for small geometry processes

Keywords

focusing; photolithography; semiconductor process modelling; sputter etching; dimensional changes; dimensional variation; focus setting; modified Gaudi structure; polysilicon; resistivity; resolution; small geometry processes; wafer steppers; Apertures; Buildings; Conductivity; Etching; Geometry; Manufacturing processes; Resists; Robustness; Solids; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303498

Filename

303498