Title :
A breakdown voltage doubler for high voltage swing drivers
Author :
Mandegaran, Sam ; Hajimiri, Ali
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A novel breakdown voltage (BV) doubler is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 Ω load was implemented in a SiGe BiCMOS process. It uses the BV-doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor.
Keywords :
BiCMOS integrated circuits; driver circuits; dynamic response; semiconductor device breakdown; voltage multipliers; 10 Gbit/s; 50 ohm; 8 V; BiCMOS; SiGe; breakdown voltage doubler; collector-emitter breakdown voltage; differential output voltage swing; dynamic response; high voltage swing drivers; low breakdown voltage transistors; optical modulator driver; timing analysis; Breakdown voltage; Circuit topology; Costs; Driver circuits; Germanium silicon alloys; High speed optical techniques; Optical modulation; Silicon germanium; Switches; Transceivers;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358747
