DocumentCode
1947674
Title
A New Method for the Extraction of MOSFET Parameters at Ambient and Liquid Helium Temperatures
Author
Balestra, F. ; Hafez, I. ; Ghibaudo, G.
Author_Institution
Laboratoire de Physique des Composants a Semiconducteurs (CNRS-UA), ENSERG/INPG, 23, Av. des Martyrs, F-38031 Grenoble Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
An original method for MOSFET parameter extraction is presented as a function of temperature. This method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage and mobility parameters.
Keywords
Capacitance; Helium; MOSFET circuits; Nitrogen; Parameter extraction; Temperature distribution; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437055
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