A simple test structure for accurately monitoring channel doping variations in a MOSFET

Author

Joardar, Kuntal

Author_Institution

Semicond. Products Sect., Motorola Inc., Mesa, AZ, USA

fYear

1994

fDate

22-25 Mar 1994

Firstpage

77

Lastpage

80

Abstract

A new test structure and measurement technique is described that allows improved monitoring of the integrated channel doping in MOSFETs that is the primary cause of statistical threshold voltage fluctuations. The methodology is physically based and has been applied successfully to a 0.8 μm BiCMOS process. The advantages of this approach over the conventional method are clearly demonstrated. Results obtained from high volume testing are also presented

Keywords

BiCMOS integrated circuits; doping profiles; insulated gate field effect transistors; integrated circuit technology; integrated circuit testing; semiconductor doping; semiconductor process modelling; 0.8 micron; BiCMOS process; MOSFET; channel doping variations; high volume testing; integrated channel doping; measurement technique; physically based methodology; statistical threshold voltage fluctuations; test structure; BiCMOS integrated circuits; Circuit testing; Doping profiles; Fluctuations; MOSFET circuits; Measurement techniques; Monitoring; Semiconductor device doping; Semiconductor device testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303499

Filename

303499