Title :
Capacitive accelerometer with high aspect ratio single crystalline silicon microstructure using the SOI structure with polysilicon-based interconnect technique
Author :
Yamamoto, T. ; Kato, N. ; Matsui, M. ; Takeuchi, Y. ; Otsuka, Y. ; Akita, S.
Author_Institution :
Labs. of Res., DENSO Corp., Aichi, Japan
Abstract :
We have developed a new processing technique for a capacitive mechanical sensor with a single crystalline silicon microstructure using the SOI structure which enables electrical isolation and interconnected wiring. This technique can make the sensor surface completely flat, allowing the formation of a cap for resin molding and a vacuum package for an angular rate sensor
Keywords :
accelerometers; annealing; capacitive sensors; etching; interconnections; microsensors; silicon-on-insulator; wafer bonding; SOI structure; Si; angular rate sensor; capacitive accelerometer; capacitive mechanical sensor; electrical isolation; high aspect ratio microstructure; polysilicon-based interconnect technique; processing technique; resin molding; single crystalline Si microstructure; vacuum package; Accelerometers; Capacitive sensors; Crystal microstructure; Crystallization; Electrodes; Mechanical sensors; Semiconductor films; Silicon; Substrates; Wiring;
Conference_Titel :
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Conference_Location :
Miyazaki
Print_ISBN :
0-7803-5273-4
DOI :
10.1109/MEMSYS.2000.838570
