Comparison of the Sensitivity to Heavy Ions of Sram in Different Simox Technologies

Author

Ferlet-Cavrois, V. ; Musseau, O. ; Leray, J.L. ; Coïc, Y.M. ; Lecarval, G. ; Guichard, E.

Author_Institution

Commissariat a l´´Energie Atomique, France

fYear

1992

fDate

6-8 Oct. 1992

Firstpage

Lastpage

Keywords

CMOS technology; Capacitance; Cyclotrons; Energy exchange; Ion sources; MOS devices; Radiation hardening; Random access memory; Silicon; Xenon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1992. IEEE International

Conference_Location

Ponte Vedra Beach, FL

ISSN

1078-621X

Print_ISBN

0-7803-7439-8

Type

DOI

10.1109/SOI.1992.664794

Filename

664794

Link To Document