Title :
Comparison of the Sensitivity to Heavy Ions of Sram in Different Simox Technologies
Author :
Ferlet-Cavrois, V. ; Musseau, O. ; Leray, J.L. ; Coïc, Y.M. ; Lecarval, G. ; Guichard, E.
Author_Institution :
Commissariat a l´´Energie Atomique, France
Keywords :
CMOS technology; Capacitance; Cyclotrons; Energy exchange; Ion sources; MOS devices; Radiation hardening; Random access memory; Silicon; Xenon;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664794
