Split-conductance, -capacitance and -current Measurements in MOSFETs

In this paper, we propose a unified analytical model which describes small signal split-admittance as well as 1arge Signal split current in relatively short channel MOSFETs. In the case of large signals, the average value of the split-current is what we classically know as the charge pumping current. Unlike what is known untill now, our model indicates that the charge pumping current is not simply the net electron or hole recombination current through the interface traps. Instead, this current is greatly influenced by the capacitive coupling between the interface traps and the device terminals. This model is validated using small signal split-admittance and large signal split-current measurements.