Title :
Characterization of Shallow Junction Ion Implantation Profiles: Correlation Between a Noncontact Photodisplacement Thermal Wave Technique and Rutherford Backscattering Analysis
Author :
Crean, G.M. ; Jeynes, C. ; Somekh, M.G. ; Webb, R.P.
Author_Institution :
National Microelectonics Research Centre, University College, Lee Maltings, Prospect Row, Cork, Ireland.
Abstract :
This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.
Keywords :
Backscatter; Boron; Educational institutions; Fabrication; Implants; Impurities; Ion implantation; Lattices; Silicon; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
