Title :
Sources of error in the extraction of ΔW [MOSFET models]
Author :
Fallon, M. ; Walton, A.J.
Author_Institution :
Dept. of Electr. Eng., Edinburgh Univ., UK
Abstract :
The relationship of ΔW with gate voltage is investigated and it is demonstrated that different results may be obtained according to the data manipulation that is employed. It is found that the choice of designed dimensions used in the extraction process can critically affect the extracted value. An optimum data set is suggested for extraction processes
Keywords :
error analysis; insulated gate field effect transistors; semiconductor device models; MOSFET models; channel width; error sources; extracted value; extraction process; gate voltage; optimum data set; Automatic testing; Buildings; Data mining; Equations; Etching; Implants; MOSFET circuits; Performance evaluation; Silicon; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303507
